The aluminum nitride is a covalent bond, which belongs to the hexafil, the crystalline structure of the lead and zinc deposit, which is white or gray.
Application:
Reports that today most of the research in the development of a semiconductor (gallium nitride or alloy aluminum gallium nitride) as the foundation and running on ultraviolet light-emitting diodes (leds), and the light wavelength of 250 nanometers. In May 2006 there was a report that a non-efficient diode could emit a light wave [1] with a wavelength of 210 nanometers. There is a 6.2 eV energy gap in a single nitride aluminum crystal with a vacuum reflectivity. In theory, the gap allows some wavelengths to pass by about 200 nanometers. But in business, there are many difficulties to overcome. Light electrical engineering, including the aluminum nitride in optical storage interface layer induced electric and electronic matrix, in the high thermal conductivity low chip carrier, as well as for military purposes.
Due to the characteristics of the piezoelectric effect of nitride, the extensibility of the nitride aluminum crystal is also used for the surface acoustic wave detector. The probe will be placed on a silicon wafer. Very few places can reliably make these thin films.
Use of aluminum nitride ceramics has high room temperature and high temperature strength, small expansion coefficient, good thermal conductivity properties, can be used for high temperature structural materials such as heat exchange equipment.
The melting properties of metal and alloy such as Al, Cu, Ag and Pb can be used as the material of crucible and casting mould of Al, Cu, Ag, Pb, etc.
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